Yield Qualification of All Wet Photoresist Stripping for CMOS Well Loop Implant Masks in 300mm High Volume Manufacturing

摘要

A methodology to develop and qualify post ion implant photoresist all wet stripping process in volume manufacturing environment is presented. The qualification result shows equivalent physical defect control and greater than 99.9% yield performance similarity compared to the current manufacturing baseline process. The estimated benefit from adoption of all wet photoresist stripping includes greater than 60% process cycle time reduction and greater than 3 times improvement in cleanroom space utilization for productivity.