Machining Technology of Ultrasonic Assisted Grinding for a Silicon Carbide Wafer Carrier

摘要

The machining technology of ultrasonic assisted ductile mode grinding for the silicon carbide (SiC) wafer carrier. The machining tool is designed and analyzed by ANASYS 14.0 and the machining technology is studied for the 6-inch SiC wafer carrier. The ultrasonic tool holder with the resonance frequency 26 kHz is designed and fabricated. The advantageous machining parameters are proposed that spindle rotation rate is 3000 rpm, feed speed is 200 mm/min, and ultrasonic output power is 250 W. The measurement results show that the average roughness (Ra) of the SiC is 0.18μm, the MRR is over 2.4 mm~3/min, the tool tips are only minor abrasion, and the cutting temperature are reduced. Obvious, the machining technology has the advantage of high surface quality, high machining efficiency and long tool life.