Accurate Simulation of the Electron Density of Surrounding Gate Transistors

摘要

In this work we have studied the influence of the effective mass anisotropy on the Quantum Electron Density (QED) of surrounding gate transistors (SGTs). We show that, despite the cylindrical symmetry of the circular cross-section SGTs, the electron density is not symmetric due to the anisotropy of the silicon conduction band. We have compared the quantum electron densities obtained in devices with different orientations, showing interesting behaviors when combining effective mass anisotropy with nonhomogeneous electrostatics due to the presence of corners.