Kinetics of Ge-Se-In Film Growth

摘要

The processes of vacuum evaporation and condensation in the Ge-Se-In system were investigated. Thin amorphous films were deposited by modified thermal evaporation from previously synthesized non-crystalline (GeSe_y)_(1- x)In_x ingots, where x=0, 5, 10, 15, 20 and y=4, 5 and 6. The specific evaporation rate was determined by measuring of the mass of evaporator before evaporation and the mass of empty evaporator after evaporation in temperature range of evaporation (500-800) K. The substrate temperature was varied in the range (300-430)K to study the condensation process and specific condensation rate was determined by measuring of the substrate mass before and after condensation. The condensation energy of the (GeSe_y)_(1-x)In_x layers steady increases at indium addition. The thin films studied by transmission electron microscopy (TEM) and electron microdiffraction (EMD) reveal homogeneous and amorphous structure. The layer composition determined by Auger electron spectroscopy is close to that of the corresponded bulk samples.