High performance GaN-based light-emitting diodes with geometric GaN shaping structure

摘要

InGaN-GaN light emitting diodes (LEDs) with p-roughened surface and n-bowl structure were fabricated by low temperature growing, ICP etching, wafer-bonding, and laser lift-off technologies. Ni/Ag/Ni mirror was introduced on the n-bowl surface. It was found the light intensity of PRUB-LEDs with different bowl size are all higher than PR-LED. The intensity of PRUB-LED with 3 μm bowls was 2.33 times higher than that of the PR-LED.