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Accelerated life time testing of fused silica upon ArF laser irradiation

机译:ARF激光辐照上的熔融二氧化硅的加速终身测试

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We report on two approaches to strongly shorten life time testing of fused silica's absoption degradation upon 193 nm laser irradiation. Both approaches are based on enhancing the two photon absorption (TPA) induced generation of E' and NBOH defects centers in fused silica compared to common marathon test irradiation parameters. For the first approach the irradiation fluence is increased from typical values H<1 mJ/cm~2 to H=10 mJ/cm~2, therefore increasing the peak laser power for a more efficient TPA process. To avoid microchannel formation in the samples, being a common break-down criterion in marathon tests based on transmission measurements, a small sample of 10 mm length is irradiated and the absorption is measured directly by the laser induced deflection (LID) technique. For comparing the experimental results with a real marathon test at H=1.3 mJ/cm~2, an experimental grade sample with very low hydrogen content, i.e. fast absorption changes due to reduced defect annealing, is choosen. During the fluence dependent absorption measurements after the prolonged irradiation at H=10 mJ/cm~2 it is found, that both experiments reveal very comparable absorption data for H=1.3 mJ/cm~2. For investigating standard material with high hydrogen content, i.e. slow absorption increase due to effective defect annealing, a sample is cooled down to -180 °C in a special designed experimental setup and irradiated at a laser fluence H=10 mJ/cm~2. To control the increase of the defect density and to determine the end of the TPA induced defect generation, the fluorescence at 650 nm of the generated NBOH centers is monitored. Before and after the low temperature experiment, the absorption coefficient is measured directly by LID technique. By applying both, elevated laser fluence and low temperature, the ArF laser induced generation of E' and NBOH centers in the investigated sample is terminated after about 1.2~*10~7 laser pulses. Therefore, a strong reduction of irradiation time is achieved in comparison to about 10~(10) pulses required in common marathon test applications.
机译:我们报告了两种方法,强烈缩短了193nm激光照射时熔融二氧化硅的吸收降解的寿命测试。与常见的马拉松试验照射参数相比,两种方法都基于增强熔融二氧化硅的两种光子吸收(TPA)诱导的E'和NBOH缺陷中心。对于第一种方法,从典型的值H <1 MJ / cm〜2至H = 10mJ / cm〜2增加辐射注量,因此增加了更有效的TPA工艺的峰值激光功率。为了避免在样品中形成微通道形成,是基于透射测量的马拉松试验中的常见分解标准,照射10mm长度的小样本,并通过激光诱导偏转(盖子)技术直接测量吸收。为了将实验结果与实验结果与H = 1.3MJ / cm〜2进行比较,选择具有非常低的氢含量的实验级样品,即由于减少的缺陷退火而产生的快速吸收变化。在发现H = 10mJ / cm〜2的延长照射后的流动依赖性吸收测量期间,两种实验揭示了H = 1.3mJ / cm〜2的非常可比的吸收数据。为了研究具有高氢含量的标准材料,即由于有效的缺陷退火而缓慢增加,在特殊设计的实验设置中,将样品冷却至-180℃,并在激光器流量H = 10mJ / cm〜2处照射。为了控制缺陷密度的增加并确定TPA诱导的缺陷产生的结束,监测所产生的NBOH中心的650nm处的荧光。在低温实验之前和之后,通过盖技术直接测量吸收系数。通过施加升高的激光流量和低温,在约1.2〜* 10〜7激光脉冲之后终止调查样品中的ARF激光诱导的E'和NBOH中心的产生。因此,与共同的马拉松测试应用中所需的约10〜(10)个脉冲相比,实现了照射时间的强烈降低。

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