fects of Photo Resist Erosion in Development on Critical DimensionPerformance for 45nm Node and below

摘要

In previous study, it has been reported that photo resist erosion after development gets severe as patterns size decreases.The 60nm feature requiring for SRAF(Sub Resolution Assistant Feature) of 45nm technology node, the photo resisterosion after develop on unexposed area was almost 400A. It will be a serious problem to degrade not only the resistthickness margin for thinner resist to enhance resolution and pattern collapse, but also CD(Critical Dimension)performance capability such as CD linearity and SRAF resolution capability by proceeding dry etching. In this paper, the effects of photo resist erosion by pattern size on CD linearity performance were studied. The photoresist erosion by pattern size was simulated with the Gaussian blur model before dry etching. The effects of dosage,PEB(Post Exposure Bake) temperature and development conditions were evaluated to reduce blur value before dryetching.