HIGH-K CAPPED CUTOFF DIELECTRIC BAND GAP ENGINEERED SILICON-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR AND METAL-OXIDE-NITRIDE-OXIDE-SEMICONDUCTOR SUITABLE FOR NAND FLASH APPLICATIONS OF A 45NM NODE OR GREATER

摘要

PURPOSE: A high-k capped cutoff dielectric band gap engineered silicon-oxide-nitride-oxide-semiconductor(SONOS) and a metal-oxide-nitride-oxide-semiconductor(MONOS) are provided to suppress gate injection by a high-k capping layer, thereby arranging a larger memory window and a lower elimination saturation level.;CONSTITUTION: A semiconductor body comprises a channel which includes a channel surface, and a drain(12) and source(11) arranged near the channel. A tunneling dielectric layer(13,14,15) is touched to the channel surface. A charge trapping dielectric layer(16) is placed on the tunneling dielectric layer. A cutoff dielectric layer(17A,17B) is placed on the charge trapping dielectric layer. A gate(18) is placed on the cutoff dielectric layer, charge trapping dielectric layer, and tunneling dielectric layer.;COPYRIGHT KIPO 2012