A Novel Sub-20V Power MOSFET with Improved On-Resistance and Threshold Variation

摘要

In this paper, a novel planar power MOSFET using ion implantation to form the body and JFET regions is presented. The novel device is compared with conventional planar VDMOS devices. The specific on-resistance is reduced by 32% due to the reduction in JFET resistance. The standard deviation of the threshold voltage is reduced from 36 to 10 mV, because the channel region of the novel device is uniformly doped by using ion implantation. The gate-drain charge density is similar, and there is a 28% reduction in the figure-of-merit. The breakdown and threshold voltages of the novel device are 14 and 0.57 V, respectively.