Four-terminal power MOSFET switch having reduced threshold voltage and on-resistance

摘要

The threshold voltage and on-resistance of a four-terminal power MOSFET switch are reduced by partially forward-biasing (to, for example, 0.5 V) the junction between the body and electrical source of the MOSFET. Preferably, as the MOSFET is switched on and off to control the current to a load, the body is switched synchronously with the gate so that the source-body junction is partially forward-biased (i.e., biased at a level that is insufficient to cause a forward current to flow through the junction) when the MOSFET switch is turned on and the body is shorted to the source when the MOSFET switch is turned off, thereby reducing the leakage current through the MOSFET in its off state. The body bias may be derived directly from the gate voltage or from a separate voltage supply line. A current-limiting device and a voltage clamp may be used to limit the body current and voltage, respectively.