Bandgap engineering for normally-off GaAsSb/InGaAs hetero-junction tunneling field-effect transistors with high on-state current

摘要

Summary form only given. Influences of energy band lineup at the tunneling junction on the performance of GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors (HTFETs) have been investigated using TCAD simulations. The results show that devices with low off-current, high on-current, and low subthreshold swing over a wide current range can be achieved simultaneously based on GaAs0.51Sb0.49/InxGa1-xAs/In0.53Ga0.47As heterojunctions.