Radiation pressure effects in diamond structure and III-V semiconductors

摘要

The photon drag effect has been observed in several semiconductors. It arises from the transfer of momentum from laser radiation to mobile electrons or holes in the material. The sign and the magnitude of the effect depend on the combination of optical, transport and band structure properties of the semiconductor as well as the magnitude of the radiation momentum. The optical rectification is a second order phenomenon arising from the generation of polarization in a non-linear medium at the passage of an intense optical beam. Both effects are generally referred as radiation pressure effects. The intention of this work is to present and discuss new experimental evidence of photon drag-effect in diamond structure and photon drag-optical rectification in III-V semiconductors using Er:YAG laser emitting at 2.94 μm, CO_2 laser emitting at 10.6 μm and at 9.6 μm, Nd:YAG laser emitting at 1.06 μm, Er:Tm:Ho:YLF laser emitting at 2.06 μm and Cr:Tm:Ho:YAG laser emitting at 2.08 μm. No saturation effects were found indicating that detectors based on these effects can be used as recording devices of pulses down to 0.1 ns. Measurements have been made on the response of the photon drag and the optical rectification detectors of Ge, Si, GaAs, GaP of several orientations. The responsivity results are converted, using the relevant theoretical equations, in to S, P and D coefficients. The experimentally obtained results are theoretically explained and are compared with previous results of other wavelengths in the literature.