Thermal design of fully-isolated bipolar transistors

摘要

The impact of layout parameters on the thermal behavior of BJTs with full dielectric isolation is extensively analyzed by measurements and numerical simulations. The influence of the aspect ratio of the emitter stripe as well as the consequences of the device scaling are investigated from a thermal viewpoint. It is shown that the metallization design plays a key role in the thermal response of fully-isolated devices. As a conclusion, plain guidelines are provided to optimize the thermal design.