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A kinetic study on the electrodeposition of Ni-Cr alloy on copper for embedded resister layer in PCB

机译:PCB中嵌入式滤压层铜电沉积电沉积的动力学研究

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The thin film resistors such as Ni-Cr alloy could be formed by the electrodeposition method for embedded passive device in printed circuit board. A kinetic study on the electrodeposition of nickel-chromium alloy on copper has been performed using a rotating disk geometry. Activation energies of nickel and chromium in the temperature range between 15°C and 35°C were 8.9kcal/mole and 3.5kcal/mole, respectively. The electrodeposition rate of nickel seems to be controlled partly by electrochemical reaction and partly by mass transport, namely mixed controlled. However, that of chromium seems to be controlled by mass transport. As the amount of chromium in deposit increased, the electric resistance of deposit surface increased. The maximum electric resistance of nickel-chromium alloy deposit was 78.6Ω /□.
机译:诸如Ni-Cr合金的薄膜电阻器可以通过印刷电路板中的嵌入被动装置的电沉积方法形成。使用旋转盘几何进行铜铬合金电沉积的动力学研究。镍和铬在15℃和35℃之间的镍和铬的活化能量分别为8.9kcal / moler和3.5kcal / mol。镍的电沉积速率似乎部分地通过电化学反应来控制,部分通过质量传输,即混合控制。然而,铬的似乎是由大规模运输控制的。随着沉积物中铬的量增加,沉积物表面的电阻增加。镍铬合金沉积物的最大电阻为78.6Ω/□。

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