Cuprous oxide films prepared by using a microwave atmospheric pressure plasma torch

摘要

A 2.45 GHz microwave atmospheric pressure torch is employed to prepare cuprous oxide films. The sputtered copper films are firstly deposited on slide glass. After that, the films are annealed in air at 500°C for 12h, which would directly oxidize into cupric oxide. The annealed films are then treated by atmospheric nitrogen plasma at 800 W for 10 min. The color changed significantly from black to reddish brown after nitrogen plasma treatment. The X-ray diffraction patterns show that annealed films are cupric oxide which is vanished after plasma treatment. The cuprous oxide films appeared after nitrogen plasma treatment. The resistivity of annealed films is 16.7Ω-cm, which reduce to 2.08Ω-cm after plasma treatment. The optical band gap of annealed films, cupric oxide phase, is 2.1 eV but the value shifts toward 2.4 eV after plasma treatment. The novel microwave plasma torch posses a fast and easy way to fabricate cuprous oxide films.