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MATERIAL SYNTHESIS TECHNOLOGY BY MICROWAVE PLASMA TORCH WITH ATMOSPHERIC PRESSURE AND HIGH TEMPERATURE

机译:微波等离子体炬具有大气压和高温的材料合成技术

摘要

The invention is for a material synthesis technology by microwave plasma torch with atmospheric pressure and high temperature. It includes a plasma torch system with atmosphere pressure & high temperature and a material growth system. In the plasma torch system the cutting-edge breakdown happens by inputting the high power microwave. Then the stable plasma torch with atmosphere pressure & high temperature generates under the avalanche effect of the cutting-edge breakdown by the solid precursor at the open-end of the cylindrical metal tube or the precursor carrier gas through the cylindrical metal tube. The result is that the precursors are decomposed and generates the active particles for material growth. In the material growth system the motion and ingredients proportion of negative and positive ions or particles in the active particle beam are controlled by the adjustable static electric field generated by the metal ring and the igniting & control electrode connecting to the external adjustable DC source. And the material growth space is heated by the heating system for the material growth. Then the material controlled growth is implemented by the heating system and the adjustable static electrical field.
机译:本发明是通过微波等离子体焊炬具有大气压和高温的材料合成技术。它包括具有大气压和高温和材料生长系统的等离子体割炬系统。在等离子体炬系统中,通过输入高功率微波来发生尖端击穿。然后,具有大气压和高温的稳定等离子体炬在圆柱形金属管的开口处的固体前端的雪崩效应下产生通过圆柱形金属管的前端的固体前兆的雪崩效应。结果是前体被分解并产生用于材料生长的活性颗粒。在材料生长系统中,活性粒子束中的负离子和正离子或颗粒的运动和成分比例由由金属环和连接到外部可调节DC源的点火和控制电极产生的可调节静电场来控制。材料生长空间被用于材料生长的加热系统加热。然后,材料控制的生长由加热系统和可调节的静电电场实现。

著录项

  • 公开/公告号US2022007488A1

    专利类型

  • 公开/公告日2022-01-06

    原文格式PDF

  • 申请/专利权人 YE BAI;DASHUAI LI;

    申请/专利号US202117355259

  • 发明设计人 YE BAI;DASHUAI LI;

    申请日2021-06-23

  • 分类号H05H1/30;H05H1/03;

  • 国家 US

  • 入库时间 2022-08-24 23:14:22

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