A silicon cantilever beam structure for the evaluation of d31, d33 and e31 piezoelectric coefficients of PZT thin films

摘要

For optimal MEMS development it is essential to fundamentally characterise the electro-mechanical properties of piezoelectric thin films, such as Lead Zirconate Titanate (PZT). A novel structure is presented to enable the piezoelectric coefficients d31, d33 and e31 to be measured for the same film, along with its Young''s modulus (Yp). By measuring displacement of a cantilever beam and its resonant frequency as a function of beam length, along with quasi-static displacement measurements, enables the coefficients to be determined.