首页> 外文会议>IEEE International Symposium on the Applications of Ferroelectrics >Synthesis of the Ferroelectric Solid Solution, Pb(Zr1-xTix)O3 on a Single Substrate Using a Modified Molecular Beam Epitaxy (MBE) Technique
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Synthesis of the Ferroelectric Solid Solution, Pb(Zr1-xTix)O3 on a Single Substrate Using a Modified Molecular Beam Epitaxy (MBE) Technique

机译:使用改进的分子束外延的单个基板上的铁电固溶液,Pb(Zr 1-X / IM> TI X / INM>)O 3 MBE)技术

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摘要

High-throughput synthesis of the ferroelectric solid solution Pb(Zr1-xTix)O3(PZT) on single Pt/Ti/SiO2Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral (R) to tetragonal (T) symmetry as a function of Zr: Ti ratio. across the substrate diagonal. This was consistent with the presence of a morphotropic phase boundary (MPB) at a Zr: Ti ratio of 0.64:0.36, different from the value of 0.53:0.47 observed for bulk ceramics. All points on the films exhibited ferroelectric hysteresis loops. The results demonstrate the feasibility of high-throughput MBE for deposition of complex ferroelectric oxides, and pave the way for further materials discovery, in particular Pb-free piezoceramics.
机译:铁电固溶体PB的高通量合成PB(Zr 1-X / INM> TI x )O 3 (PZT)在单PT / TI /使用改性分子束外延(MBE)系统证明了SiO 2 SI衬底。 PZT膜作为Zr:Ti比的函数从rhombohdral与四边形(t)对称的相转变。穿过基板对角线。这与Morphotropic相位边界(MPB)的存在在Zr:Ti比为0.64:0.36的情况下,与散装陶瓷观察到的0.53:0.47的值不同。电影中的所有点都表现出铁电滞后环。结果表明,高通量MBE用于沉积复杂铁电氧化物的可行性,并为进一步的材料发现,特别是无铅压电陶瓷铺设。

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