The dielectric properties of Ba_(0.6)Sr_(0.4)Cr_(x)Ti_(1-x)O_(3) thin films prepared by pulsed laser deposition

摘要

Ba_(0.6)Sr_(0.4)Cr_(x)Ti_(1-x)O_(3) (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol(percent) to 2.0mol(percent). X-ray diffraction measurement detected an increasing in lattice parameters which could be due to the characteristic of film growth process. Dielectric properties of the BSCT films were measured. The dissipation factors were decreased in the Cr-doped films. The highest Figure of Merit (FOM) value of 33.3 was obtained in 1.0mol(percent)-doped BSCT film. As a result, the effect of Cr doping is positive.