Novel solid-state spatial light modulator (SLM) is developed. An electro-optic spatial light modulator (EOSLM) has advantages of high-speed operation, solid-state structure and easy integration with silicon LSIs in comparison with liquid crystal displays (LCD) and micro-electro-mechanical system (MEMS) displays. We propose a kind of Fabry-Perot type planer optical pixel to achieve high optical efficiency and high aperture ratio. The use of sol-gel technique makes it possible to fabricate optically smooth 800nm-thick lead zirconate titanate (PZT) films, which results in sufficient transparency for the three primary colors of visible light. The large electro-optic effects of Δn=0.026 is confirmed, and the optical switching response of 7ns is fastest compared with that have ever been reported. The prototype 180×180 SLM chip, which includes pixel driver circuits, is fabricated and successfully demonstrated. High-speed SLM has been strongly demanded for holographic data storage, massively parallel optical processors and 3-dimmensional displays. An electro-optic spatial light modulator (EOSLM) has advantages of low drive current and high transparency at short wavelength region corresponding to blue color compared with high-speed Magneto-optic spatial light modulator (MOSLM) [1]. However, EOSLM had been problems of high drive voltage i.e. 100V and low aperture ratio. We propose a kind of Fabry-Perot type planer optical cell to solve above two problems. This paper describes the novel spatial light modulator device technology, such as an electro-optic thin film, device structure and optical switching characteristics. A key point of the proposed technique is to fabricate an optical film with large electro-optic effects on Si LSIs. The PLZT-on-LSI technology results in successful demonstration of 180×180 SLM chip display.
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