Mn Occupations in Ga_(1-x)Mn_xN Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

摘要

X-ray absorption near-edge structure (XANES) is used to study the characteristics of different sites of Mn in the Ga1?xMnxN dilute magnetic semiconductor (DMS) with zinc-blende structure. The XANES spectra of representative Mn occupation sites (substitutional MnGa, interstitial MnI, MnGa-MnI dimer and Mn cluster) in GaN lattice are theoretically calculated and compared with experimental results. The substitutional Mn in GaN is characterized by a pre-edge peak at 2.0 eV and a post-edge multiple-scattering peak at 29.1 eV. The peaks shift in position and drop in intensity dramatically for the interstitial MnI and MnGa-MnI dimmer, and disappear completely for Mn clusters. We propose that the distinct characteristics of Mn K-edge XANES spectra for different Mn sites favor to discriminate Mn occupations in GaMnN DMS.