Novel Resistivity Random Access Memory (ReRAM) based on tunnelling probability modulation using Si/CaF{sub}2/CdF{sub}2 quantum-well structures

摘要

Novel Resistivity Random Access Memory (ReRAM) using Si/CaF{sub}2/CdF{sub}2/CaF{sub}2/Si quantum-well structure with double step energy barrier has been proposed and analyzed. Using this structure, resistivity modulation (ON/OFF ratio) more than 1000 can be expected because of the tunnelling probability variation caused by potential modulation due to electron charge/discharge in the CdF{sub}2 quantum-well. Low voltage write/erase and long retention time can be expected simultaneously because of the Si/CaF{sub}2 double step energy barrier structures. In principle, switching speed, operation voltage and retention time are maintained even after ultimate scaling. 4F{sup}2 cell structure based on cross point scheme will be discussed.