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GaN-based Nanocolumn Emitters and Related Technology

机译:基于GAN的纳图发射器和相关技术

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摘要

Self-assembled InGaN nanocolumn LEDs emiting from ultraviolet to red were fabricated on n-type (111) Si substrates by rf-MBE. To achieve homogenization of nanocolumns, Ti-mask selective area growth was developed to fabricate uniform arrays of GaN nanocolumns.
机译:通过RF-MBE在n型(111)Si底物上制造从紫外线到红色的自组装IngaN纳米柱LED。为了实现纳米umns的均质化,开发了Ti-掩盖选择性面积的生长,以制造GaN Nanocolumns的均匀阵列。

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