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The design and fabrication of nanostructure on p-type GaN surface for GaN-based LEDs with high light extraction efficiency

机译:具有高光提取效率的GaN基LED纳米结构对P型GaN表面的设计与制造

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摘要

The parameters of nanostructure on p-GaN surface for light extraction efficiency of GaN based LEDs were studied by using Monte-Carlo ray tracing simulation, and nanostructures were fabricated by using interferential exposure and ICP dry etching.
机译:通过使用Monte-Carlo射线跟踪模拟研究了基于GaN的LED的光提取效率的纳米结构对P-GaN表面的参数,通过使用干扰暴露和ICP干蚀刻来制造纳米结构。

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