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Search for new materials in sputtered V1-xCx films

机译:在溅射的V1-XCX薄膜中搜索新材料

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In this work, the vanadium–carbon system has been explored in a wide range of atomic carbon content x (0.01bxb0.69) with the aim of obtaining films of new materials. V1xCx films were prepared by reactive dc diode magnetron sputtering and Electron Probe Micro-Analysis (EPMA) was used to determine their composition. The structures of as-sputtered films were identified by X-ray and Transmission Electron Microscopy (TEM). It is shown that they strongly depend on the carbon content x and several interesting facts can be underlined. If most of the films are crystalline and contain phases related to the phase diagram, a glass forming ability (GFA), located around x=0.32, permits to obtain a mainly amorphous film. This value is in the carbon content range of the hemicarbide V2C. Below x=0.32, films are composed of the bcc vanadium solid solution which can be considerably extended (up to 0.17) inducing a lattice parameter expansion. Above x=0.32, films are first wholly made up of the substoichiometric VC monocarbide and then contain additional amorphous carbon. For x=0.32, TEM images and associated diffraction patterns suggest a nanocomposite material with numerous little crystals of carbide embedded in an amorphous matrix. A special attention has been devoted to this composition and a crystallization study has been undertaken. All these results show the capability of the binary V–C system combined with a sputtering process to generate promising films and coatings.
机译:在这项工作中,钒 - 碳系统已经在各种原子碳含量X(0.01bxb0.69)中探讨,目的是获得新材料薄膜。通过反应性DC二极管磁控溅射和电子探针微分析(EPMA)制备V1XCX薄膜,用于确定其组合物。通过X射线和透射电子显微镜(TEM)鉴定了溅射膜的结构。结果表明,它们强烈取决于碳含量x,几个有趣的事实可以下调。如果大多数薄膜是结晶并且含有与相图相关的相,则位于X = 0.32周围的玻璃形成能力(GFA),允许主要是无定形膜。该值处于半碳化物V2C的碳含量范围。在X = 0.32以下,薄膜由BCC钒固溶体组成,其可以相当延长(高达0.17),诱导晶格参数膨胀。高于X = 0.32,首先由替代型VC多元化物组成薄膜,然后含有另外的无定形碳。对于X = 0.32,TEM图像和相关的衍射图案表明纳米复合材料具有嵌入非晶基质中的碳化物少量晶体的纳米复合材料。对该组合物致力于特别注意,并进行了结晶研究。所有这些结果表明二元V-C系统与溅射过程结合以产生有前途的薄膜和涂层的能力。

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