Nanocrystalline diamond (NCD) films in an amorphous matrix have been deposited by standard microwave plasma chemical vapour deposition from CH4/N2 mixtures, and subsequently characterized comprehensively with respect to their structure and morphology, their composition, their crystalline properties, and their bonding environment. Thereafter, some of the coatings have been subjected to rapid thermal annealing (RTA) at 1100 and 1400 8C, respectively. Characterization of the annealed films by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR) revealed the loss of material upon annealing, while the bonding structure remained almost unchanged at least after the 1100 8C treatment. RTA at 1400 8C leads to the formation of crystalline SiCxNyOz material, very probably by reaction with the residual gas, whereas crystalline graphite is not observed. FTIR measurements indicate that hydrogen containing species from the residual gas may contribute to the loss of material. Finally, the morphological changes observed after the annealing give some insight into the growth mechanisms of these NCD films which are discussed in terms of a spherulitic growth caused by a rather low primary nucleation density but very high secondary nucleation rate.
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机译：通过标准微波等离子体化学气相沉积来自CH 4 / N 2混合物的纳米晶金刚石（NCD）膜，随后对其结构和形态，它们的组合物，其结晶性能及其粘合环境进行了全面的表征。此后，一些涂层分别在1100和1400 8℃下进行快速热退火（RTA）。通过扫描电子显微镜（SEM），X射线衍射（XRD），拉曼光谱和傅立叶变换红外光谱（FTIR）表征退火薄膜，在退火时揭示了材料的损失，而粘接结构至少在后面至少保持不变1100 8C治疗。在1400 8C下RTA导致形成结晶SiCxnyoz材料，大概是通过与残余气体反应，而未观察到结晶石墨。 FTIR测量表明，含有来自残留气体的含氢物质可能有助于材料的损失。最后，在退火后观察到的形态变化对这些NCD薄膜的生长机制介绍，这些NCD薄膜的生长机制是由由相当低的原核细胞密度而是非常高的次生成核速率引起的球素生长讨论的。
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