TEMPERATURE DEPENDENCE OF AMORPHOUS SILICON OXIDE THIN-FILM SOLAR CELLS NEAR PHASE BOUNDARY

摘要

The temperature dependence of wide bandgap amorphous silicon oxide-based thin film single-junction solar cells on the phase of the intrinsic absorber was investigated in order to find the optimal absorber for top cell of multi-junction solar cells which is an attractive for the use in high temperature environment. Photo J-V characteristics were measured using a solar simulator at an ambient temperature in the range of 25-75°C. It was found that the protocrystalline silicon oxide solar cells provided the lowest temperature coefficient for the efficiency, while solar cells fabricated at the mixed-phase of amorphous＋microcrystalline silicon oxide were low initial efficiency. Experimental results indicated that protocrystalline silicon oxide is a promising material for using as an intrinsic absorber of Si-based thin film multi-junction solar cells which operating in high temperature regions.