High Rate Deposition of Reactive Oxide Coatings by New Plasma Enhanced Chemical Vapor Deposition Source Technology

摘要

Clear silicon dioxide and zinc oxide coatings are deposited at high rates using a new plasma chemical vapor deposition source. The new source overcomes previous PECVD problems associated with electrode coating and enables dense, uniform, adherent films on low temperature plastics. Using the source, thick, abrasion resistant SiOC coatings are deposited at over 1100 nm-m/min. The source physics is presented and film properties such as Taber abrasion, Crock meter, adhesion and optical clarity are reviewed.