PROCESS INTEGRATION ISSUES WITH SPIKE, FLASH AND LASER ANNEAL IMPLEMENTATION FOR 90 AND 65 NM TECHNOLOGIES

摘要

With the need to reduce vertical and lateral device dimensions, submelt Laser and flash anneal either with or without prior spike rapid thermal anneal (sRTA) has recently attracted attention. It combines improved active area activation with reduced gate poly depletion for a process that is essentially free of additional diffusion. This paper will focus on process integration issues during implementation into 90 and 65 nm SOI logic technologies: Transistor parameter fluctuation and pattern effects, power density limitations and the impact on the reliability of ultra-thin gate oxides, compatibility with new materials such as SiGe, transistor scaling and performance enhancement.