Ultra-Shallow Junction Formation by Plasma Doping and Flash Lamp Annealing

摘要

Ultra-shallow P+/N junctions were formed by boron doping using plasma doping method combined with activation annealing using spike-RTA, flash lamp annealing or laser annealing. The junctions formed with flash lamp annealing or laser annealing were promising and superior to those formed by conventional low energy ion implantation method from the viewpoints of shallowness, abruptness and low sheet resistance. The pre-amorphization by He plasma treatment (He-PA process) played an important role for the successful formation or these junctions. Electrical properties were analyzed by not only sheet resistance but also Hall measurements and junction leakage measurement