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EIS MODELING OF FILMS OF BIS-TRI-ETHOXYSILYLPROPYLTETRASUL-FIDE ON AI 2024-T3 SUBSTRATES

机译:AI 2024-T3基板上的双 - 三乙氧基甲硅烷烯丙基丙基丙基浮胶膜的EIS模型

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Thin films of the hydrolyzed silane bis-[triethoxysilylpropyl]tetrasulfide (sulfane) were deposited on alkaline-cleaned Al 2024-T3 panels and investigated by Electrochemical Impedance Spectroscopy (EIS) using the non-corrosive electrolyte 0.5 M K{sub}2SO{sub}4. The effects of continuous immersion of the films in this electrolyte and curing the films at room temperature or at 100 C in air were studied. An equivalent circuit is proposed that fits the experimental data very well. It is demonstrated that by this approach the hydrolysis of the ester groups to silanol groups and condensation of the latter to siloxane units in the film can be observed. Evidence is presented for the formation of an interfacial film between the crosslinked silane film and the aluminum oxide. It is concluded that EIS in a non-corrosive electrolyte is a useful method for studying the stability of silane films formed on metals and can contribute to determining the optimum conditions for depositing silane films on metals for corrosion protection.
机译:将水解硅烷双 - [三乙氧基甲硅烷基丙基]脱硫(磺胺)的薄膜沉积在碱性清洁的Al 2024-T3面板上,并使用非腐蚀性电解质0.5MK {Sub} 2SO {Sub}通过电化学阻抗光谱(EIS)研究4.研究了在该电解质中连续浸渍膜的效果并在室温下固化薄膜或在空气中在100℃下固化。提出了一种等效电路,其非常符合实验数据。结果证明,通过这种方法,可以观察到硅烷醇基团的水解和后者与硅氧烷单元的缩合。提出了在交联的硅烷膜和氧化铝之间形成界面膜的证据。结论是,非腐蚀性电解质中的EIS是研究在金属上形成的硅烷膜的稳定性的有用方法,有助于确定沉积在金属上的硅烷膜的最佳条件进行腐蚀保护。

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