Development of a Selective Tantalum Carbide (TaC) Etchant

摘要

A superior nonflammable selective TaC etchant has been developed. This etchant possesses a TaC etch rate of 13 A/minute as well as TaC to HfO{sub}2 etch selectivity of 140:1. The TaC to SiO{sub}2 etch selectivity is high enough to allow the use of this etchant with a SiO{sub}2 hard mask.