Ultra-thin (EOT～0.31m) and low leakage dielectrics of La-aluminate deposited directly on Si substrate

摘要

Ultra-thin (0.31 nm) LaAlO{sub}3 gate dielectrics directly deposited on Si substrate were realized. We found that LaAlO{sub}3 deposition at substrate temperature of 700°C led to low defect density of the film at the as-deposited state. The electron mobility of LaAlO{sub}3 n-MISFET was improved by forming gas annealing, meaning that the defects at the direct interface could be passivated with hydrogen.