POST METALLIZATION ANNEAL EFFECTS IN HfO_2 BASED CAPACITORS WITH VARIOUS GATE ELECTROIDES

摘要

Metal-oxide-semiconductor (MOS) capacitors based on HfO_2 gate stacks with various metal and metallic compound gates are compared to study the impact of the gate electrode materials. We find the oxide charge in these capacitors is mainly located at the interface between the HfO_2 layer and the interfacial layer. The capacitor with nickel silicides gate exhibits highest oxide charge density due to interfacial reactions at the NiSi/high — k layer interface. In addition, a comparative analysis of the post-metallization anneal (PMA) effects on the interfaces of the MOS capacitors is presented.