Numerical analysis of InSb parameters and InSb 2D infrared focal plane arrays

摘要

Accurate and reliable numerical simulation tools are necessary for the development of advanced semiconductor devices. InSb is using the MATLAB and TCAD simulation tool to calculatet the InSb body bandstructure, blackbody's radiant emittance and simultaneously solve the Poisson, Continuity and transport equations for 2D detector structures. In this work the material complexities of InSb, such as non-parabolicity, degenergcy, mobility and Auger recombination/generation are explained, and physics based models are developed. The Empirical Tight Binding Method (ETBM) was been using to calculate the bandstructure for InSb at 77 K by Matlab. We describe a set of systematic experiments performed in order to calibrate the simulation to semiconductor devices backside illuminated InSb focal plane arrays realized with planar technology. The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied.