首页> 外文会议>Electronic Systemintegration Technology Conference >C4NP as a High-Volume Manufacturing Method for Fine-Pitch and Lead-Free FlipChip Solder Bumping
【24h】

C4NP as a High-Volume Manufacturing Method for Fine-Pitch and Lead-Free FlipChip Solder Bumping

机译:C4NP作为微距和无铅触筒焊料凸起的高批量生产方法

获取原文
获取外文期刊封面目录资料

摘要

More and more high-end microelectronic devices are being packaged by using solder bumps as the method of interconnection. The two main technologies are FlipChip in Package (FCiP) and Wafer Level Chip Scale Package (WLCSP). The main difference is that FCiP devices are placed on a substrate which then interconnects to the PC Board (PCB). WLCSP devices connect directly onto the board. There are various solder bumping technologies used in volume production. These include electroplating, solder paste printing, evaporation and the direct attach of preformed solder spheres. FCiP demands many small bumps on tight pitch whereas WLCSP typically requires much larger solder bumps. All these established technologies have important limitations for fine pitch bumping especially when it comes to lead-free solder alloys. The most commonly used method of generating fine-pitch solder bumps is by electroplating the solder. This process is difficult to control and costly, especially when it comes to lead-free solder alloys. These challenges in the transition to lead-free solder bumping has led the European Union to grant exemptions from the ban of lead in certain solder bumping applications. However, the pressure to move to lead-free continues for the entire industry. C4NP (C4-New Process) is a new solder bumping technology developed by IBM and commercialized by Suss MicroTec. C4NP addresses the limitations of existing bumping technologies by enabling low-cost, fine pitch bumping using a variety of lead-free solder alloys. C4NP is a solder transfer technology where molten solder is injected into pre-fabricated and reusable glass templates (molds). Mold and wafer are brought into close proximity and solder bumps are transferred onto the entire 300mm (or smaller) wafer in a single process step. C4NP technology is capable of fine pitch bumping while offering the same alloy selection flexibility as solder paste printing. The simplicity of the C4NP process makes it a low cost solution for both, fine-pitch FC in package as well as WLCSP bumping applications. This paper provides a summary of manufacturing and reliability results of C4NP bumped high-end logic devices and how they compare to electroplated lead-free solder bumps. It discusses the relevant process equipment technology and the novel requirements to run a HVM (high volume manufacturing) C4NP process. The paper also talks about the C4NP manufacturing cost model and elaborates on the cost comparison to alternative bumping techniques. The data in this paper is provided by IBM's packaging operation at the Hudson Valley Research Park in East Fishkill, NY.
机译:通过使用焊料凸块作为互连方法,通过焊接越来越高的高端微电子器件。这两个主要技术是封装(FCIP)和晶圆级芯片刻度封装(WLCSP)中的Flipchip。主要区别在于将FCIP器件放置在基板上,然后将其互连到PC板(PCB)。 WLCSP设备直接连接到电路板上。批量生产中有各种焊料凸起技术。这些包括电镀,焊膏印刷,蒸发和预制焊球的直接附着。 FCIP要求在紧缩音高上的许多小凸起,而WLCSP通常需要更大的焊料凸块。所有这些已建立的技术都对细间距碰撞具有重要局限性,特别是当涉及无铅焊料合金时。通过电镀焊料,产生微距焊料凸块的最常用方法。这种过程难以控制和昂贵,特别是当涉及无铅焊料合金时。过渡到无铅焊料凸起的这些挑战导致欧盟在某些焊料撞击应用中禁止铅的豁免。然而,为整个行业转向无铅的压力。 C4NP(C4-新过程)是IBM开发的新型焊料撞击技术,由Suss Microtec商业化。 C4NP通过使用各种无铅焊料合金实现低成本,精细间距撞击,解决了现有的碰撞技术的局限性。 C4NP是一种焊料转移技术,其中熔融焊料注入预制和可重复使用的玻璃模板(模具)中。将模具和晶片置于近距离接近,并且在单个工艺步骤中将焊料凸块传递到整个300mm(或更小)的晶片上。 C4NP技术能够精细间距凸点,同时提供与焊膏印刷相同的合金选择灵活性。 C4NP工艺的简单性使其成为封装中的微距Fc以及WLCSP凸块应用的低成本解决方案。本文提供了C4NP凸起的高端逻辑器件的制造和可靠性结果的摘要以及它们与电镀无铅焊料凸块的比较方式。它讨论了相关的过程设备技术和运行HVM(大容量制造)C4NP过程的新要求。本文还讨论了C4NP制造成本模型,并详细说明了与替代碰撞技术的成本比较。本文中的数据由IBM在纽约东部Fishkill的Hudson Valley Research Park的包装操作提供。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号