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Influence of postdeposftion annealing on the structural and optical properties of cosputtered Mn doped ZnO thin films

机译:延迟灌注退火对富含型Mn掺杂ZnO薄膜结构和光学性质的影响

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The influence of postgrowth annealing on the structural and optical properties of rf cosputtered Mn doped ZnO thin films deposited on glass substrate at room temperature has been investigated. All as deposited Zn_(1-x)Mn_x films are highly textured, with the c axis of the wurtzite structure along the growth direction. The as grown films are in a state of compressive stress and a reduction in stress with postgrowth annealing treatment are observed. The band gap of Mn doped ZnO films (3.34 eV) is slightly larger than the pure ZnO film (3.30 eV) and is found to decrease with an increase in annealing temperature for all the samples. The optical dispersion of refractive index with photon energy in Zn_(1-x)Mn_xO films with varying x and different annealing temperature is studied in the light of single oscillator and Pikhtin-Yas'kov [Sov. Phys. Semicond. 15, 81 (1981)] model, respectively.
机译:研究了产后退火对室温下玻璃基板上沉积在玻璃基板上的RF种植Mn掺杂ZnO薄膜的结构和光学性质的影响。作为沉积的Zn_(1-x)Mn_x薄膜具有高度纹理的,C轴沿着生长方向。作为生长的薄膜处于压缩应力状态,观察到与生成后退火处理的应力降低。 Mn掺杂的ZnO膜(3.34eV)的带隙略大于纯ZnO膜(3.30eV),发现随着所有样品的退火温度的增加而降低。在单一振荡器和Pikhtin-Yas'kov的光中研究了具有不同X和不同退火温度的Zn_(1-x)Mn_XO膜中的折射率与光子能量的光学分散和不同的退火温度。物理。半透明。图15,81(1981)]模型。

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