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Angular Dependence Of Critical Current Density In Ca-Doped YBCO Epitaxial Thin Films

机译:CA掺杂YBCO外延薄膜中临界电流密度的角度依赖性

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The angular dependence of the critical current density J_(c) was analyzed in Y_(0.9)Ca_(0.1)Ba_(2)Cu_(3)O_(7-delta) epitaxial thin films grown by PLD technique on SrTiO_(3) and CeO_(2) buffered Al_(2)O_(3) substrates. The latter shows a broad peak in the J_(c) vs theta curves at (theta)(velence)0 deg (H//c), revealing a directional character of the pinning mechanisms. This feature is affected both by temperature and magnetic field intensity emerging at intermediate T and H values. The origin of the c-axis correlated pinning is discussed and compared with the previously reported studies on the directional pinning.
机译:在SRTIO_(3)上通过PLD技术生长的Y_(0.9)CA_(0.1)BA_(0.1)BA_(2)CU_(3)o_(7-DELTA)外延薄膜分析临界电流密度J_(C)的角度依赖性。 CEO_(2)缓冲AL_(2)O_(3)基板。后者在(θ)(velence)0 deg(h // c)的j_(c)vs曲线中显示了宽峰,揭示了钉扎机构的方向特征。该特征在中间T和H值处产生的温度和磁场强度。讨论了C轴相关钉扎的起源,并与先前报道的定向钉扎的研究进行了比较。

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