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Angular dependences of critical current density in YBCO thin films with crossed columnar defects

机译:交叉柱状缺陷的YBCO薄膜的临界电流密度与角度的关系

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We investigated the dependences of the critical current density J _c on the magnetic field angle θ in YBa_2Cu _3O_(7 δ) thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J _c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current-voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.
机译:我们研究了临界电流密度J _c对YBa_2Cu _3O_(7δ)薄膜具有交叉结构的柱状缺陷(CDs)的磁场角θ的依赖性。为了安装交叉的CD,使用高能Xe离子以相对于c轴的两个角度照射薄膜。对于所有辐照的薄膜,c轴周围的附加峰均出现在J _c(θ)中。在较低的磁场中,交叉角为θ_i=±10°的交叉CD引起的J_c(θ)峰的高度高于平行CD的峰。可以认为即使在θ_i=±25°的情况下,交叉CD沿c轴的磁通钉扎也会发生相关性,这也由电流-电压特性的定标参数的扭结行为表明。匹配字段的1/3。另一方面,在较高的磁场中,与平行的CD相比,交叉CD结构的J_c(θ)峰的高度和宽度随磁场的增加而迅速减小。在交叉的CD结构中,CD方向的分散会阻止在高磁场中磁通钉扎的相关性,这在平行CD构造中会由于包括间隙磁通线的磁通线的集体钉扎而在平行CD构造中发生通过CD直接固定在磁通线之间。

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