Radiation-proof photodetectors for spectral region 0.35÷1.1 μm

摘要

Article is devoted to development and research of radiation resistance of photodiodes on the basis of layered compounds aCe, lHCe, aTe intended for visible and near IR-region of a spectrum and the process of diffusion of various impurity in layered semiconductors. It is shown that in new manufacturing techniques of photodiode structures initial materials aCe, aTe and lHCe were exposed to influence ionizing irradiations at small fluences, and then on them processes of diffusion of compensating elements with preliminary annealing were made. Specified changes in technology of reception of photosensitive elements have allowed to receive photodiode structures with more than five elements. Radiation resistance of the researched photodiodes have been determined and the opportunity of their use under conditions of high radiation is revealed.