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LOCAL ELECTRON DENSITY PROFILE NEAR THE SAMPLE BOUNDARY INVESTIGATED BY MAGNETO-CAPACITANCE IN QUANTUM HALL REGIME

机译:在量子霍尔政权中磁电容研究的样品边界附近的局部电子密度曲线

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The spatial profiles of the electron density near the edge of narrow wires made from GaAs/AlGaAs heterostructure have been investigated using magneto-capacitance measurements in quantum Hall conditions. With decreasing the wire width below one micron, the profile of the electron density becomes steep and the electron density decreases due to the confinement potential at the boundaries of the wire. The extent of the depletion region and the local electron density near the wire edge is strongly influenced by the wire width, especially in sub-micron wires. The evaluation techniques of the local electron density profile near the edge are discussed in detail.
机译:已经在量子霍尔条件下使用磁电容测量研究了由GaAs / Algaas异质结构制成的窄丝边缘附近的电子密度的空间轮廓。随着减小一个微米以下的线宽,电子密度的轮廓变得陡峭,并且由于线的边界处的限制电位,电子密度降低。耗尽区的程度和线边缘附近的局部电子密度受到线宽的强烈影响,尤其是亚微米线。详细讨论了边缘附近的局部电子密度轮廓的评价技术。

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