INVESTIGATION OF TEMPERATURE DEPENDENCE OF CONTACT RESISTANCE FOR Au-Ti-Pd_2Si-n~+-Si OHMIC CONTACTS SUBJECTED TO MICROWAVE IRRADIATION

摘要

Based on a theoretical analysis of temperature dependence of contact resistance R_C for Au-Ti-Pd_2Si-n~+-Si oh-mic contact, a current flow mechanism is proposed that explains the experimentally observed R_C growth with temperature in the 100-380 К temperature range. It is shown that microwave treatment of such contacts leads to reduction of R_C values spread over the wafer and decrease of R_C, while R_C growth with temperature in the 100-380 К temperature range retains.