DOUBLE-GATE FINFET INNOVATION: FROM 3-TERMINAL TO FLEXIBLE THRESHOLD VOLTAGE 4-TERMINAL

摘要

Fin-type double-gate MOSFETs (FinFETs) with an ideal rectangular cross section have successfully been fabricated by using newly developed orientation-dependent wet etching. The excellent electrical characteristics including the superior short-channel effects (SCEs) immunity in the ultra-narrow Si-fin channel devices were experimentally confirmed. Moreover, the innovated four-terminal (4T) FinFETs with independent double gates have been developed by the wet etching technique and the precise CMP process. The flexible threshold voltage (V(h) controllability in the fabricated 4T-FinFETs has been demonstrated by using one of the double gates and the synchronized driving mode operation by the double gates. The developed orientation-dependent wet etching technique is practically useful for fabricating ultra-narrow Si-fin channels. The 4T-FinFETs are promising for future high-performance and flexible power managing ULSI circuits.