AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS FABRICATED ON 100MM Si/POLY SiC COMPOSITE SUBSTRATES

摘要

AlGaN/GaN heterostructure field effect transistors have been grown andrnfabricated on 100mm Si/poly SiC composite substrates by metalorganic chemical vapor deposition. For a given growth recipe, the composite substrates allow thicker crack-free GaN to be deposited compared to conventional Si substrates. Properties of the Al_(0.20)Ga_(0.80)N device layers grown on composite substrates yielded essentially the same characteristics as those grown on Si(111). An on-wafer CW power sweep of a 2mm gate-periphery cell resulted in a power density of 1.2 W/mm and a maximum efficiency of 49% at a drain bias of 15V, I_(dq) of 25% I_(dss) and a frequency of 2.14 GHz. These first-of-kind results establish the feasibility of growth of III-N electronic structures on 100mm Si/poly SiC composite substrates and warrant future investigations in this area.