Modelling of the InGaAsN/GaAs(N) quantum dots by 10-band k/spl middot/p theory

摘要

We present a theoretical study of the electronic and optical properties of InGaAsN/GaAs quantum dot (QD) structures. The calculations are based on a 10/spl times/10 k/spl middot/p band anti-crossing Hamiltonian, incorporating valence, conduction and nitrogen-induced bands. Numerical results for the model system of capped pyramid shaped quantum dot with {101} facets on a thin wetting layer are presented. Theoretical results show lowering of the fundamental optical transition upon introduction of nitrogen. With appropriate tailoring of the indium and nitrogen concentration this system could be a potential candidate for the successful 1.55 /spl mu/m emission on GaAs substrate.