Preparation of nano-scale patterns on-the silicon oxide surface by dip-pen nanolithography

摘要

Dip-pen nanolithography (DPN), which uses an "inked" AFM tip to deposit organic molecules through a water meniscus onto an underlying substrate under ambient conditions, has been used to create 1N-(2-aminoethyI)-3-amino-propyl-trimethoxysilane (AEAPTMS) nano patterns as linkers for anchoring gold nanoparticles on the surface of SiO_2. Its this study, conditions of DPN for organic patterns, AEAPTMS, with sub-100 nm dimensions are investigated. Moreover, gold nanoparticles with citrate-negativey-charged surface were deposited selectively on top of DPN orgainc patterns. Lateral force microscope (LFM) was utilized to differentiate different surface between oxidized semi-conductor surfaces and patterned areas with monolayer of AEAPTMS. Line-width as small as 60 nm has beca successfully achieved by this method.