Controlled Growth of Ⅲ-Ⅴ Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices

摘要

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ～1 μm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.