Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-deposited Si{sub}xN{sub}y

摘要

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD Si{sub}xN{sub}y dielectric layers and investigated electrical properties of nitrided SiO{sub}2/4H-SiC interface after oxidizing the Si{sub}xN{sub}y in dry oxygen at 1150°C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited Si{sub}xN{sub}y have been explained in this paper.