首页> 外文会议>International Conference on Semiconductor Technology >PURGE GASES FOR THE REMOVAL OF AIRBORNE MOLECULAR CONTAMINATION DURING THE STORAGE AND TRANSPORT OF SILICON WAFERS
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PURGE GASES FOR THE REMOVAL OF AIRBORNE MOLECULAR CONTAMINATION DURING THE STORAGE AND TRANSPORT OF SILICON WAFERS

机译:在硅晶片的储存和运输过程中吹扫用于去除空气的分子污染的气体

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A method was developed to measure total hydrocarbons (THCs) to 1 part-per-trillion (ppt) concentration levels with a gas chromatograph with a flame ionization detector (GC/FID). This method was applied to measure THCs in a front opening universal pod (FOUP) under static and purge conditions. XCDA? purge gas was used for this experiment.XCDA gas is clean dry air (CDA) purified with Aeronex? purification technology to remove moisture to less than 1 part-per-billion (ppb) and hydrocarbon, sulfur, and siloxane contaminants to less than lppt. The result from this experiment was that the FOUP's environment contained ppb concentration levels of THCs under static conditions and ppt concentration levels of THCs under purge conditions. The following test involved a FOUP and a load port. The result from this test ensured that XCDA purge gas could be delivered to the FOUP from the load port with THC contaminants kept at ppt concentration levels. The final test involved exposing a silicon wafer to the FOUP's environment under static and purge conditions. The wafer's hydrocarbon contamination was less with the presence of a XCDA purge gas.
机译:开发了一种方法以测量总烃(THC)至1个单百万(PPT)浓度水平,气相色谱仪用火焰电离检测器(GC / FID)。应用该方法以在静止和吹扫条件下测量前开口通用荚(FOUP)中的THC。 XCDA?吹扫气体用于该实验.XCDA气体是用Aeronex纯化的清洁干燥空气(CDA)?纯化技术将水分除去少于1分(PPB)和烃,硫和硅氧烷污染物的少于LPPT。该实验的结果是FOUP的环境在静态条件下含有PPB浓度水平的THC,并在吹扫条件下的THCS的PPT浓度水平。以下测试涉及FOUP和负载端口。该测试的结果确保XCDA吹扫气体可以从负载端口输送到FOUP,其中THC污染物保持在PPT浓度水平。最终测试涉及在静态和吹扫条件下将硅晶片暴露于FOUP的环境中。晶片的烃污染较少,随着XCDA吹扫气体的存在。

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