NOVEL INTEGRATION CONCEPTS FOR SIGE-BASED RF-MOSFETS

摘要

An overview of critical integration issues for future generation rf-MOSFETs is presented. The process requirements and implementation of selective epitaxy for the source and drain regions is given. In-situ doping of highly boron doped recessed SiGe S/D is demonstrated. Channel region engineering is discussed and 50 ran strained SiGe pMOSFETs are demonstrated. Implementation of high-K gate dielectrics is presented and device performance is demonstrated for surface channel MOSFETs with a gate stack based on ALD-formed HfO2 / A12O3. Low frequency noise properties for those devices are analyzed. Contact metallization issues are critical for ultra scaled devices and here the implementation of NiSi on SiGe(C) regions as well as on ultra thin body SOI MOSFETs are presented. Finally, a spacer pattering technology using optical lithography to fabricate sub-50nm high-frequency MOSFETs is demonstrated.